Vertical Si nanowire with ultra-high-aspect-ratio by combined top-down processing technique
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- Nakamura, J., Higuchi, K. & Maenaka, K. Microsyst Technol (2013) 19: 433. doi:10.1007/s00542-012-1662-2
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Vertical Si nanowires with ultra-high-aspect-ratio were fabricated using a combined process of deep reactive ion etching and sacrificial oxidation. The combined process starts with etching the Si substrates by the Bosch process to form micrometer-scale structures. The etched micrometer-scale structures are shrunk to nanometer-scale by sacrificial oxidation. The fabricated Si nanowires that were aligned vertically to the substrate had a diameter of less than 200 nm and a length greater than 10 μm. One of the fabricated Si nanowires had a diameter of 110 nm and a length of 11 μm. The resulting aspect-ratio reached 100, which is a value that is significantly high for vertical Si nanowires fabricated by using a top-down approach.