Microsystem Technologies

, Volume 16, Issue 10, pp 1713–1717

RF–DC power conversion of Schottky diode fabricated on AlGaAs/GaAs heterostructure for on-chip rectenna device application in nanosystems

  • Farahiyah Mustafa
  • Norfarariyanti Parimon
  • Abdul Manaf Hashim
  • Shaharin Fadzli Abd Rahman
  • Abdul Rahim Abdul Rahman
  • Mohd Nizam Osman
Technical Paper

DOI: 10.1007/s00542-010-1099-4

Cite this article as:
Mustafa, F., Parimon, N., Hashim, A.M. et al. Microsyst Technol (2010) 16: 1713. doi:10.1007/s00542-010-1099-4

Abstract

The Schottky diodes enjoined with coplanar waveguides are investigated for applications in on-chip rectenna device applications without insertion of a matching circuit. The design, fabrication, DC characteristics and RF-to-DC conversion of the AlGaAs/GaAs HEMT Schottky diode is presented. The RF signals are well converted by the fabricated Schottky diodes with cut-off frequency up to 25 GHz estimated in direct injection experiments. The outcomes of these results provide conduit for breakthrough designs for ultra-low power on-chip rectenna device technology to be integrated in nanosystems.

Copyright information

© Springer-Verlag 2010

Authors and Affiliations

  • Farahiyah Mustafa
    • 1
  • Norfarariyanti Parimon
    • 1
  • Abdul Manaf Hashim
    • 1
  • Shaharin Fadzli Abd Rahman
    • 1
  • Abdul Rahim Abdul Rahman
    • 1
  • Mohd Nizam Osman
    • 2
  1. 1.Material Innovations and Nanoelectronics Research Group, Faculty of Electrical EngineeringUniversiti Teknologi MalaysiaUTM SkudaiMalaysia
  2. 2.Telekom Research & DevelopmentTM Innovation CentreCyberjayaMalaysia