RF–DC power conversion of Schottky diode fabricated on AlGaAs/GaAs heterostructure for on-chip rectenna device application in nanosystems
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- Mustafa, F., Parimon, N., Hashim, A.M. et al. Microsyst Technol (2010) 16: 1713. doi:10.1007/s00542-010-1099-4
The Schottky diodes enjoined with coplanar waveguides are investigated for applications in on-chip rectenna device applications without insertion of a matching circuit. The design, fabrication, DC characteristics and RF-to-DC conversion of the AlGaAs/GaAs HEMT Schottky diode is presented. The RF signals are well converted by the fabricated Schottky diodes with cut-off frequency up to 25 GHz estimated in direct injection experiments. The outcomes of these results provide conduit for breakthrough designs for ultra-low power on-chip rectenna device technology to be integrated in nanosystems.