Microsystem Technologies

, Volume 12, Issue 12, pp 1143–1151

Low voltage actuated RF micromechanical switches fabricated using CMOS-MEMS technique

Authors

    • Department of Mechanical EngineeringNational Chung Hsing University
  • Jing-Han Chen
    • Department of Mechanical EngineeringNational Chung Hsing University
Technical Paper

DOI: 10.1007/s00542-006-0243-7

Cite this article as:
Dai, C. & Chen, J. Microsyst Technol (2006) 12: 1143. doi:10.1007/s00542-006-0243-7

Abstract

This study investigates the fabrication of radio frequency (RF) micromechanical switches with low actuation voltage using the commercial 0.35 μm double polysilicon four metal (DPFM) complementary metal oxide semiconductor (CMOS) process and the post-process. The advantages of RF micromechanical switches include low pull-down voltage and ease of post-processing. Three types of RF micromechanical switches are designed and manufactured. The RF switches are capacitive type, and the structures of the switches comprise coplanar waveguide (CPW) transmission lines, supported springs and a suspended membrane. The post-process requires only a wet etching silicon dioxide layer. Experimental results show that type-c switch needs only a pull-down voltage of 7 V.

Keywords

Micromechanical switchesCMOSPost-process

Copyright information

© Springer-Verlag 2006