Microsystem Technologies

, Volume 12, Issue 8, pp 766–772

A micromachined tunable resonator fabricated by the CMOS post-process of etching silicon dioxide

Technical paper

DOI: 10.1007/s00542-005-0077-8

Cite this article as:
Dai, CL. & Yu, WC. Microsyst Technol (2006) 12: 766. doi:10.1007/s00542-005-0077-8

Abstract

This work investigates the fabrication of a micromechanical tunable resonator using the commercial 0.35 μm complementary metal oxide semiconductor (CMOS) process and the post-process of only one maskless wet etching. The post-process has advantages of easy execution and low cost. The post-process employs an etchant (silox vapox III) to etch the silicon dioxide layer to release the suspended structures of the resonator. The tunable resonator comprises a driving unit, a tuning unit and a sensing unit. The resonant frequency of the resonator can be tuned using a dc-biased electrostatic comb of linearly varied finger-length. Experimental results show that the resonant frequency of the resonator is about 4.8 kHz, and it has a frequency-tuning range of 6.8% at the tuning voltage of 0–25 V.

Copyright information

© Springer-Verlag 2005

Authors and Affiliations

  1. 1.Department of Mechanical EngineeringNational Chung Hsing UniversityTaichungTaiwan, R.O.C.

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