Microsystem Technologies

, 12:441

Anodic bonding of glass to aluminium

  • K. Schjølberg-Henriksen
  • E. Poppe
  • S. Moe
  • P. Storås
  • M.M.V. Taklo
  • D.T. Wang
  • H. Jakobsen
Technical paper

DOI: 10.1007/s00542-005-0040-8

Cite this article as:
Schjølberg-Henriksen, K., Poppe, E., Moe, S. et al. Microsyst Technol (2006) 12: 441. doi:10.1007/s00542-005-0040-8

Abstract

Anodic bonding of glass to aluminium may provide a higher degree of freedom in device design. In this paper, a systematic variation of the bonding parameters for the aluminium–glass bond is presented. Hermetic seals with strengths of 18.0 MPa can be achieved using a 50–100-nm-thick bonding aluminium layer, and bonding at 300–400°C applying a voltage of 1,000–1,500 V for 20 min. With these parameters, bond yields above 95.1% were obtained on 17 wafers. The bonds survived extensive thermal ageing without significant degradation. The possibility of bonding glass to an aluminium layer with buried, electrically isolated conductors underneath is also demonstrated.

Copyright information

© Springer-Verlag 2005

Authors and Affiliations

  • K. Schjølberg-Henriksen
    • 1
  • E. Poppe
    • 1
  • S. Moe
    • 1
  • P. Storås
    • 1
  • M.M.V. Taklo
    • 1
  • D.T. Wang
    • 1
  • H. Jakobsen
    • 2
    • 3
  1. 1.Department of MicrosystemsSINTEF ICTOsloNorway
  2. 2.SensoNor ASHortenNorway
  3. 3.Vestfold University CollegeTønsbergNorway