Applied Physics B

, Volume 67, Issue 5, pp 555–558

V:YAG – a new passive Q-switch for diode-pumped solid-state lasers

  • A.M. Malyarevich
  • I.A. Denisov
  • K.V. Yumashev
  • V.P. Mikhailov
  • R.S. Conroy
  • B.D. Sinclair
Regular paper

DOI: 10.1007/s003400050544

Cite this article as:
Malyarevich, A., Denisov, I., Yumashev, K. et al. Appl Phys B (1998) 67: 555. doi:10.1007/s003400050544

gsa

=3.0×10-18 cm2 and σesa=1.4×10-19 cm2 at 1064 nm, and σgsa=7.2×10-18 cm2 and σesa=7.4×10-19 cm2 at 1342 nm. Q-switched operation was demonstrated at 1064 nm and 1342 nm from a Nd:YVO4 microchip laser, producing pulses as short as 9.3 ns at 1342 nm with peak powers of 350 W.

PACS: 42.55.Xi; 42.60.Gd

Copyright information

© Springer-Verlag 1998

Authors and Affiliations

  • A.M. Malyarevich
    • 1
  • I.A. Denisov
    • 1
  • K.V. Yumashev
    • 1
  • V.P. Mikhailov
    • 1
  • R.S. Conroy
    • 2
  • B.D. Sinclair
    • 2
  1. 1.International Laser Center, 65/17 F. Skaryna Ave., 220027 Minsk, BelarusBY
  2. 2.J.F. Allen Research Laboratories, School of Physics and Astronomy, University of St Andrews, St Andrews, Scotland, KY16 9SS, UKUK