Emission properties of a Tm30.1mm+:GdVO4 microchip laser at 1.9 μm
- Cite this article as:
- Wyss, C., Lüthy, W., Weber, H. et al. Appl Phys B (1998) 67: 545. doi:10.1007/s003400050542
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as a host for thulium has several advantages for diode pumping in comparison with other crystals. The absorption cross section of thulium in GdVO4 is considerably stronger and broader than in YAG and YLF and the spectrum is shifted closer to the emission wavelength of commercially available AlGaAs laser diodes. In our paper, we report on the temporal and spectral emission properties of a monolithical Tm30.01mm+([%at.]6.9):GdVO4 microchip laser at 1.9 μm. The laser can be adjusted to emit either cw or in an oscillating regime. Slope efficiencies up to 47% are achieved. This value exceeds the Stokes limit of 42%.