Applied Physics B

, Volume 65, Issue 2, pp 235–243

High-average-power diode-pumped femtosecond Cr:LiSAF lasers

  • D. Kopf
  • K.J. Weingarten
  • G. Zhang
  • M. Moser
  • M.A. Emanuel
  • R.J. Beach
  • J.A. Skidmore
  • U. Keller

DOI: 10.1007/s003400050269

Cite this article as:
Kopf, D., Weingarten, K., Zhang, G. et al. Appl Phys B (1997) 65: 235. doi:10.1007/s003400050269

PACS: 42.55R; 42.60F; 42.60D 

Copyright information

© Springer-Verlag 1997

Authors and Affiliations

  • D. Kopf
    • 1
  • K.J. Weingarten
    • 2
  • G. Zhang
    • 1
  • M. Moser
    • 3
  • M.A. Emanuel
    • 4
  • R.J. Beach
    • 4
  • J.A. Skidmore
    • 4
  • U. Keller
    • 1
  1. 1.Ultrafast Laser Physics Laboratory, Institute of Quantum Electronics, Swiss Federal Institute of Technology, ETH Hönggerberg, HPT, CH-8093 Zürich, Switzerland (Fax: 011-41/633 10 59, E-mail: kopf@iqe.phys.ethz.ch, WWW: http://iqe.ethz.ch/ultrafast/Welcome.html)CH
  2. 2.Time-Bandwidth Products AG, Technoparkstr. 1, CH-8005 Zürich, SwitzerlandCH
  3. 3.Paul Scherrer Institute, PSI, Zürich, SwitzerlandCH
  4. 4.Lawrence Livermore National Laboratory, P.O. Box 808, L-250, Livermore, California 94550, USAUS