Applied Physics B

, Volume 64, Issue 1, pp 97–101

Photoacoustic CdTe surface characterization

  • I. Delgadillo
  • M. Vargas
  • A. Cruz-Orea
  • J. J. Alvarado-Gil
  • R. Baquero
  • F. Sánchez-Sinencio
  • H. Vargas

DOI: 10.1007/s003400050151

Cite this article as:
Delgadillo, I., Vargas, M., Cruz-Orea, A. et al. Appl Phys B (1996) 64: 97. doi:10.1007/s003400050151

Abstract.

 The correlation between the surface roughness and the surface recombination velocity in CdTe is explored. This is achieved through the use of atomic force microscopic analysis and the investigation of the photoacoustic signal as a function of the modulation frequency in a heat-transmission configuration. It is also shown that in the modulation frequency range where the samples are thermally thick, analyses of the photoacoustic signal amplitude and phase can single-out the different non-radiative recombination heat sources responsible for the signal, even in the case where the regimes are strongly mixed. The procedure employed in this investigation reveals as a very promising method in the field of characterization of surface finishes in semiconductors.

PACS: 06.70.Dn; 06.30.Ft; 87.45.Dr; 07.06.j

Copyright information

© Springer-Verlag Berlin Heidelberg 1996

Authors and Affiliations

  • I. Delgadillo
    • 1
  • M. Vargas
    • 2
  • A. Cruz-Orea
    • 1
  • J. J. Alvarado-Gil
    • 3
  • R. Baquero
    • 3
  • F. Sánchez-Sinencio
    • 3
  • H. Vargas
    • 1
  1. 1.Programa Multidisciplinario de Ciencias Aplicadas y Tecnología Avanzada, CINVESTAV-IPN Apdo. Postal 14-740 07000 México D.F. (Fax: 5-7477096, E-mail: isabel@fis.cinvestav.mx, fisgrupo@mvaxl.red.cinvestav.mx)XX
  2. 2.Instituto de Física de la Universidad de Guanajuato, Apdo. Postal E-143, 37000 Léon, Gto., MéxicoXX
  3. 3.Departamento de Física, CINVESTAV-IPN, Apdo. Postal 14-740 07000 México D.F.XX