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Double-heterostructure ridge-waveguide GaAs/AlGaAs phase modulator for 780 nm lasers

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Abstract

Results of a GaAs/AlGaAs-based phase modulator designed for an operating wavelength of 780 nm are presented for the first time. The modulator is based on a P-p-i-n-N double heterostructure and features a waveguide with a vertical W-shaped index profile optimized for low propagation losses and a ridge waveguide for lateral index-guiding. A phase modulation efficiency of 12°/V mm is reported. The propagation losses are determined to about 1.4 dB/cm.

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Acknowledgments

This work is supported by the German Space Agency DLR with funds provided by the Federal Ministry of Economics and Technology (BMWi) under Grant Number 50WM1141.

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Authors and Affiliations

  1. Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489, Berlin, Germany

    B. Arar, H. Wenzel, R. Güther, O. Brox, A. Maaßdorf, A. Wicht, G. Erbert, M. Weyers & G. Tränkle

  2. Leibniz-Institut für Astrophysik Potsdam, 14482, Potsdam, Germany

    H. N. J. Fernando

  3. Humboldt-Universität zu Berlin, 12489, Berlin, Germany

    A. Peters

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  1. B. Arar
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  2. H. Wenzel
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  3. R. Güther
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  4. O. Brox
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  5. A. Maaßdorf
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  6. A. Wicht
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  10. H. N. J. Fernando
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  11. A. Peters
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Correspondence to B. Arar.

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Arar, B., Wenzel, H., Güther, R. et al. Double-heterostructure ridge-waveguide GaAs/AlGaAs phase modulator for 780 nm lasers. Appl. Phys. B 116, 175–181 (2014). https://doi.org/10.1007/s00340-013-5671-3

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  • DOI: https://doi.org/10.1007/s00340-013-5671-3

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