Applied Physics B

, Volume 108, Issue 1, pp 129–135

Doping-induced changes in the saturable absorption of monolayer graphene

Authors

    • Department of PhysicsUniversity of Colorado at Boulder
  • J. M. Miller
    • Department of PhysicsUniversity of Colorado at Boulder
  • T. R. Schibli
    • Department of PhysicsUniversity of Colorado at Boulder
Article

DOI: 10.1007/s00340-012-5095-5

Cite this article as:
Lee, C., Miller, J.M. & Schibli, T.R. Appl. Phys. B (2012) 108: 129. doi:10.1007/s00340-012-5095-5

Abstract

Graphene is a broadband, fast saturable absorber well suited for passive mode-locking of lasers. The broadband absorption, ultra-short recovery time, and low cost of graphene absorbers compare favorably with traditional semiconductor saturable absorber mirrors (SESAMs). However, it remains difficult to tailor the parameters of a monolayer graphene absorber such as the modulation depth and the insertion loss; this limits the absorber’s design freedom, which is often required for mode-locking without Q-switching instability. We demonstrate in this work that, by hole-doping graphene chemically to various Fermi levels, the modulation depth and insertion loss are modified. Further control of graphene’s saturable absorption by electric-field gating and its application to active suppression of Q-switching in lasers is discussed.

Copyright information

© Springer-Verlag 2012