Si homojunction structured near-infrared laser based on a phonon-assisted process
We fabricated several near-infrared Si laser devices (wavelength ∼1300 nm) showing continuous-wave oscillation at room temperature by using a phonon-assisted process induced by dressed photons. Their optical resonators were formed of ridge waveguides with a width of 10 μm and a thickness of 2 μm, with two cleaved facets, and the resonator lengths were 250–1000 μm. The oscillation threshold currents of these Si lasers were 50–60 mA. From near-field and far-field images of the optical radiation pattern, we observed the high directivity which is characteristic of a laser beam. Typical values of the threshold current density for laser oscillation, the ratio of powers in the TE polarization and TM polarization during oscillation, the optical output power at a current of 60 mA, and the external differential quantum efficiency were 1.1–2.0 kA/cm2, 8:1, 50 μW, and 1 %, respectively.
- Si homojunction structured near-infrared laser based on a phonon-assisted process
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Applied Physics B
Volume 107, Issue 3 , pp 659-663
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- 1. Department of Electrical Engineering and Information Systems, Graduate School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo, 113-8656, Japan
- 2. Nanophotonics Research Center, Graduate School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo, 113-8656, Japan
- 3. National Institute of Information and Communications Technology, Koganei, Tokyo, 184-8795, Japan