, Volume 106, Issue 2, pp 315-319
Date: 03 Aug 2011

Efficient high-power Ho:YAG laser directly in-band pumped by a GaSb-based laser diode stack at 1.9 μm

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Abstract

An efficient high-power Ho:YAG laser directly in-band pumped by a recently developed GaSb-based laser diode stack at 1.9 μm is demonstrated. At room temperature a maximum continuous wave output power of 55 W at 2.122 μm and a slope efficiency of 62% with respect to the incident pump power were achieved. For narrow linewidth laser operation a volume Bragg grating was used as output coupler. In wavelength stabilized operation a maximum output power of 18 W at 2.096 μm and a slope efficiency of 30% were obtained. In this case the linewidth is reduced from 1.2 nm to below 0.1 nm. Also spectroscopic properties of Ho:YAG crystals at room temperature are presented.