Applied Physics B

, Volume 106, Issue 2, pp 315–319

Efficient high-power Ho:YAG laser directly in-band pumped by a GaSb-based laser diode stack at 1.9 μm

Authors

    • LISA Laser Products OHG
    • Photonics and Terahertz-TechnologyRuhr-University Bochum
  • P. Koopmann
    • LISA Laser Products OHG
    • Institute of Laser-PhysicsUniversity of Hamburg
  • M. Schäfer
    • LISA Laser Products OHG
  • K. Scholle
    • LISA Laser Products OHG
  • P. Fuhrberg
    • LISA Laser Products OHG
Article

DOI: 10.1007/s00340-011-4670-5

Cite this article as:
Lamrini, S., Koopmann, P., Schäfer, M. et al. Appl. Phys. B (2012) 106: 315. doi:10.1007/s00340-011-4670-5

Abstract

An efficient high-power Ho:YAG laser directly in-band pumped by a recently developed GaSb-based laser diode stack at 1.9 μm is demonstrated. At room temperature a maximum continuous wave output power of 55 W at 2.122 μm and a slope efficiency of 62% with respect to the incident pump power were achieved. For narrow linewidth laser operation a volume Bragg grating was used as output coupler. In wavelength stabilized operation a maximum output power of 18 W at 2.096 μm and a slope efficiency of 30% were obtained. In this case the linewidth is reduced from 1.2 nm to below 0.1 nm. Also spectroscopic properties of Ho:YAG crystals at room temperature are presented.

Copyright information

© Springer-Verlag 2011