Applied Physics B

, Volume 100, Issue 4, pp 695–698

A structure for enhanced terahertz emission from a photoexcited semiconductor surface

  • M. I. Bakunov
  • R. V. Mikhaylovskiy
  • M. Tani
  • C. T. Que
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DOI: 10.1007/s00340-010-4206-4

Cite this article as:
Bakunov, M.I., Mikhaylovskiy, R.V., Tani, M. et al. Appl. Phys. B (2010) 100: 695. doi:10.1007/s00340-010-4206-4

Abstract

A structure that can provide enhancement of terahertz emission from a semiconductor surface excited with femtosecond laser pulses is proposed. The structure consists of a semiconductor layer on a Si substrate with metal coating on the upper surface of the layer and a Si lens attached to the bottom of the substrate. The semiconductor is excited through a hole in the coating and emits terahertz radiation through the substrate lens. We demonstrate theoretically that the proposed structure can increase the terahertz yield by orders of magnitude as compared to the previously used schemes of terahertz emission from a semiconductor surface.

Copyright information

© Springer-Verlag 2010

Authors and Affiliations

  • M. I. Bakunov
    • 1
  • R. V. Mikhaylovskiy
    • 2
  • M. Tani
    • 3
  • C. T. Que
    • 3
  1. 1.University of Nizhny NovgorodNizhny NovgorodRussia
  2. 2.University of ExeterExeterUK
  3. 3.Research Center for Development of Far-Infrared RegionUniversity of FukuiFukuiJapan