Applied Physics B

, Volume 100, Issue 1, pp 159–168

FDTD modeling of realistic semicontinuous metal films

Authors

    • Birck Nanotechnology Center, School of Electrical and Computer EngineeringPurdue University
    • Department of Electrical and Systems EngineeringUniversity of Pennsylvania
  • P. Nyga
    • Birck Nanotechnology Center, School of Electrical and Computer EngineeringPurdue University
    • Institute of OptoelectronicsMilitary University of Technology
  • M. D. Thoreson
    • Birck Nanotechnology Center, School of Electrical and Computer EngineeringPurdue University
    • Graduate School for Advanced Optical Technologies (SAOT)Universität Erlangen-Nürnberg
  • A. V. Kildishev
    • Birck Nanotechnology Center, School of Electrical and Computer EngineeringPurdue University
  • V. P. Drachev
    • Birck Nanotechnology Center, School of Electrical and Computer EngineeringPurdue University
  • V. M. Shalaev
    • Birck Nanotechnology Center, School of Electrical and Computer EngineeringPurdue University
Article

DOI: 10.1007/s00340-010-3985-y

Cite this article as:
Chettiar, U.K., Nyga, P., Thoreson, M.D. et al. Appl. Phys. B (2010) 100: 159. doi:10.1007/s00340-010-3985-y

Abstract

We have employed a parallelized 3D FDTD (finite-difference time-domain) solver to study the electromagnetic properties of random, semicontinuous, metal films. The structural features of the simulated geometries are exact copies of the fabricated films and are obtained from SEM images of the films themselves. The simulation results show good agreement with the experimentally observed far-field spectra, allowing us to also study the nonlinear moments of the optical responses for these realistic nanostructures.

These results help to further our understanding of the details of the electromagnetic response of randomly structured metal films. Our results can also be applied in the optimization of random metal nanostructures and in the design of surface-enhanced spectroscopies and other plasmonic applications.

Copyright information

© Springer-Verlag 2010