Applied Physics B

, Volume 100, Issue 1, pp 181–187

Structural dependency of optical excitation transfer via optical near-field interactions between semiconductor quantum dots

Authors

    • School of EngineeringThe University of Tokyo
    • The Nanophotonics Research CenterThe University of Tokyo
  • T. Yatsui
    • School of EngineeringThe University of Tokyo
    • The Nanophotonics Research CenterThe University of Tokyo
  • T. Kawazoe
    • School of EngineeringThe University of Tokyo
    • The Nanophotonics Research CenterThe University of Tokyo
  • M. Naruse
    • School of EngineeringThe University of Tokyo
    • The Nanophotonics Research CenterThe University of Tokyo
    • National Institute of Information and Communications Technology
  • M. Ohtsu
    • School of EngineeringThe University of Tokyo
    • The Nanophotonics Research CenterThe University of Tokyo
Article

DOI: 10.1007/s00340-010-3977-y

Cite this article as:
Nomura, W., Yatsui, T., Kawazoe, T. et al. Appl. Phys. B (2010) 100: 181. doi:10.1007/s00340-010-3977-y

Abstract

The distribution dependency of quantum dots was theoretically and experimentally investigated with respect to the basic properties optical excitation transfer via optical near-field interactions between quantum dots. The effects of three-dimensional structure and arraying precision of quantum dots on the signal transfer performance were analyzed. In addition, the quantum dot distribution dependency of the signal transfer performance was experimentally evaluated by using stacked CdSe quantum dots and an optical near-field fiber probe tip laminated with quantum dots serving as an output terminal, showing good agreement with theory. These results demonstrate the basic properties of signal transfer via optical near-field interactions and serve as guidelines for a nanostructure design optimized to attain the desired signal transfer performances.

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© Springer-Verlag 2010