Applied Physics B

, Volume 98, Issue 4, pp 773–778

Low threshold current density, low resistance oxide-confined VCSEL fabricated by a dielectric-free approach

  • Y. Ding
  • W. J. Fan
  • D. W. Xu
  • C. Z. Tong
  • Y. Liu
  • L. J. Zhao
Article

DOI: 10.1007/s00340-009-3810-7

Cite this article as:
Ding, Y., Fan, W.J., Xu, D.W. et al. Appl. Phys. B (2010) 98: 773. doi:10.1007/s00340-009-3810-7

Abstract

We present the fabrication process and experimental results of 850-nm oxide-confined vertical cavity surface emitting lasers (VCSELs) fabricated by using dielectric-free approach. The threshold current of 0.4 mA, which corresponds to the threshold current density of 0.5 kA/cm2, differential resistance of 76 Ω, and maximum output power of more than 5 mW are achieved for the dielectric-free VCSEL with a square oxide aperture size of 9 μm at room temperature (RT). LIV characteristics of the dielectric-free VCSEL are compared with those of conventional VCSEL with the similar aperture size, which indicates the way to realize low-cost, low-power consumption VCSELs with extremely simple process. Preliminary study of the temperature-dependent LI characteristics and modulation response of the dielectric-free VCSEL are also presented.

PACS

42.55.Px 85.60.Bt 85.35.Be 
Download to read the full article text

Copyright information

© Springer-Verlag 2009

Authors and Affiliations

  • Y. Ding
    • 1
  • W. J. Fan
    • 1
  • D. W. Xu
    • 1
  • C. Z. Tong
    • 1
  • Y. Liu
    • 2
  • L. J. Zhao
    • 3
  1. 1.School of Electrical and Electronic EngineeringNanyang Technological UniversitySingaporeRepublic of Singapore
  2. 2.Optoelectronics R&D Center, Institute of SemiconductorsChinese Academy of SciencesBeijingChina
  3. 3.Key Laboratory of Semiconductor Materials Science, Institute of SemiconductorsChinese Academy of SciencesBeijingChina

Personalised recommendations