Applied Physics B

, Volume 95, Issue 3, pp 435–439

Periodic poling of optical waveguides produced by swift-heavy-ion irradiation in LiNbO3

Authors

    • Departamento de Física de MaterialesUniversidad Autónoma de Madrid
    • Centro Microanálisis de Materiales (CMAM)Universidad Autónoma de Madrid
    • Laboratoire d’Astrophysique de Grenoble
  • A. García-Cabañes
    • Departamento de Física de MaterialesUniversidad Autónoma de Madrid
  • M. Carrascosa
    • Departamento de Física de MaterialesUniversidad Autónoma de Madrid
  • F. Agulló-López
    • Departamento de Física de MaterialesUniversidad Autónoma de Madrid
    • Centro Microanálisis de Materiales (CMAM)Universidad Autónoma de Madrid
  • J. Villarroel
    • Departamento de Física de MaterialesUniversidad Autónoma de Madrid
  • M. Crespillo
    • Centro Microanálisis de Materiales (CMAM)Universidad Autónoma de Madrid
  • J. Olivares
    • Centro Microanálisis de Materiales (CMAM)Universidad Autónoma de Madrid
    • Instituto de ÓpticaConsejo Superior de Investigaciones Científicas
Article

DOI: 10.1007/s00340-009-3458-3

Cite this article as:
Caballero-Calero, O., García-Cabañes, A., Carrascosa, M. et al. Appl. Phys. B (2009) 95: 435. doi:10.1007/s00340-009-3458-3

Abstract

The generation of periodically poled structures in waveguides prepared by swift-heavy-ion (SHI) irradiation, i.e. in the electronic stopping power regime, has been achieved following two different strategies. In one of them we have prepared bulk PPLN samples by an applied electrical field, followed by irradiation with F ions at 22 MeV. After the ion irradiation, a waveguide showing a high optical confinement is obtained, preserving the original PPLN structure. The second strategy consisted of electric periodic poling of previously fabricated swift-ion-irradiated waveguides. To our knowledge this method has not been, so far, successful for conventional implanted waveguides. The successful fabrication of PPLN structures on novel waveguides prepared by SHI irradiation offers a promising potential for nonlinear integrated optical devices.

PACS

42.65.Wi42.70.Mp42.79.Gn2.88.+h29.20.Ej

Copyright information

© Springer-Verlag 2009