AlGaInAs/InP eye-safe laser pumped by a Q-switched Nd:GdVO4 laser
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- Huang, S.C., Chang, H.L., Su, K.W. et al. Appl. Phys. B (2009) 94: 483. doi:10.1007/s00340-008-3346-2
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An AlGaInAs quantum-well structure grown on a Fe-doped InP transparent substrate is developed to be a gain medium in a high-peak-power nanosecond laser at 1570 nm. Using an actively Q-witched 1064 nm laser to pump the gain chip, an average output power of 135 mW is generated at a pulse repetition rate of 30 kHz and an average pump power of 1.25 W. At a pulse repetition rate of 20 kHz, the peak output power is up to 290 W at a peak pump power of 2.3 kW.