Applied Physics B

, Volume 94, Issue 3, pp 483–487

AlGaInAs/InP eye-safe laser pumped by a Q-switched Nd:GdVO4 laser

  • S. C. Huang
  • H. L. Chang
  • K. W. Su
  • A. Li
  • S. C. Liu
  • Y. F. Chen
  • K. F. Huang
Article

DOI: 10.1007/s00340-008-3346-2

Cite this article as:
Huang, S.C., Chang, H.L., Su, K.W. et al. Appl. Phys. B (2009) 94: 483. doi:10.1007/s00340-008-3346-2

Abstract

An AlGaInAs quantum-well structure grown on a Fe-doped InP transparent substrate is developed to be a gain medium in a high-peak-power nanosecond laser at 1570 nm. Using an actively Q-witched 1064 nm laser to pump the gain chip, an average output power of 135 mW is generated at a pulse repetition rate of 30 kHz and an average pump power of 1.25 W. At a pulse repetition rate of 20 kHz, the peak output power is up to 290 W at a peak pump power of 2.3 kW.

PACS

78.67.De42.55.Px42.60.Gd

Copyright information

© Springer-Verlag 2008

Authors and Affiliations

  • S. C. Huang
    • 1
  • H. L. Chang
    • 1
  • K. W. Su
    • 1
  • A. Li
    • 1
  • S. C. Liu
    • 1
  • Y. F. Chen
    • 1
  • K. F. Huang
    • 1
  1. 1.Department of ElectrophysicsNational Chiao Tung UniversityHsinchuTaiwan