400 mW and 16.5% wavelength conversion efficiency at 488 nm using a diode laser and a PPLN crystal in single pass configuration
- First Online:
- Cite this article as:
- Uebernickel, M., Fiebig, C., Blume, G. et al. Appl. Phys. B (2008) 93: 823. doi:10.1007/s00340-008-3235-8
- 122 Downloads
Continuous wave power of more than 400 mW at 488 nm has been generated by frequency doubling of 2.45 W at 976 nm obtained from a distributed Bragg reflector tapered diode laser. This results in a wavelength conversion efficiency of 16.5% and an electrical-to-optical efficiency of more than 4.5%. We used a 50 mm long periodically poled MgO:LiNbO3 bulk crystal in single-pass configuration for the second harmonic generation. This is to the author’s knowledge the highest output power and the highest wavelength conversion efficiency at 488 nm generated by a monolithic semiconductor laser device in single pass configuration with a bulk crystal. A deviation from the quadratic dependency of the frequency doubling is explained by the decrease of the beam quality of the fundamental wave.