Applied Physics B

, Volume 93, Issue 4, pp 823–827

400 mW and 16.5% wavelength conversion efficiency at 488 nm using a diode laser and a PPLN crystal in single pass configuration

  • M. Uebernickel
  • C. Fiebig
  • G. Blume
  • K. Paschke
  • B. Eppich
  • R. Güther
  • G. Erbert
Article

DOI: 10.1007/s00340-008-3235-8

Cite this article as:
Uebernickel, M., Fiebig, C., Blume, G. et al. Appl. Phys. B (2008) 93: 823. doi:10.1007/s00340-008-3235-8

Abstract

Continuous wave power of more than 400 mW at 488 nm has been generated by frequency doubling of 2.45 W at 976 nm obtained from a distributed Bragg reflector tapered diode laser. This results in a wavelength conversion efficiency of 16.5% and an electrical-to-optical efficiency of more than 4.5%. We used a 50 mm long periodically poled MgO:LiNbO3 bulk crystal in single-pass configuration for the second harmonic generation. This is to the author’s knowledge the highest output power and the highest wavelength conversion efficiency at 488 nm generated by a monolithic semiconductor laser device in single pass configuration with a bulk crystal. A deviation from the quadratic dependency of the frequency doubling is explained by the decrease of the beam quality of the fundamental wave.

PACS

42.65.Ky42.55.Px42.60.Pk

Copyright information

© Springer-Verlag 2008

Authors and Affiliations

  • M. Uebernickel
    • 1
  • C. Fiebig
    • 1
  • G. Blume
    • 1
  • K. Paschke
    • 1
  • B. Eppich
    • 1
  • R. Güther
    • 1
  • G. Erbert
    • 1
  1. 1.Ferdinand-Braun-Institut für HöchstfrequenztechnikBerlinGermany