Applied Physics B

, Volume 89, Issue 2, pp 367–376

Effect of ytterbium concentration on cw Yb:YAG microchip laser performance at ambient temperature – Part II: Theoretical modeling

Authors

    • Institute for Laser ScienceUniversity of Electro-Communications
  • A. Shirakawa
    • Institute for Laser ScienceUniversity of Electro-Communications
  • K.-I. Ueda
    • Institute for Laser ScienceUniversity of Electro-Communications
  • A.A. Kaminskii
    • Crystal Laser Physics Laboratory, Institute of CrystallographyRussian Academy of Sciences
Article

DOI: 10.1007/s00340-007-2808-2

Cite this article as:
Dong, J., Shirakawa, A., Ueda, K. et al. Appl. Phys. B (2007) 89: 367. doi:10.1007/s00340-007-2808-2

Abstract

A theoretical model based on a quasi-four-level system is modified to investigate the effect of Yb concentration on performance of continuous-wave Yb:YAG microchip lasers by taking into account temperature-dependent thermal population distribution, temperature-dependent emission cross-section and concentration-dependent fluorescence lifetime, thermal loading, thermal conductivity, and thermal expansion coefficient. The local temperature rise in Yb:YAG crystal caused by the absorbed pump power plays an important role in the laser performance of Yb:YAG microchip lasers working at ambient temperature without actively cooling the sample. The output wavelengths dependent on output coupling, Yb concentration, and pump power level were analyzed quantitatively. The numerical simulation of Yb:YAG microchip lasers is in good agreement with experimental data. The optimized laser operation for Yb:YAG microchip lasers is proposed by varying the thickness and output coupling for different Yb concentrations. The effect of thermal lens, thermal deformation effect, and saturated inversion population distribution inside the Yb:YAG crystal on performance of heavy-doped Yb:YAG microchip lasers are also addressed.

Copyright information

© Springer-Verlag 2007