Applied Physics B

, Volume 87, Issue 3, pp 425–430

High-power ps InGaAs diode laser MOPA system for efficient frequency doubling in periodically poled KTP

Authors

    • Department of PhysicsTechnical University of Kaiserslautern
  • M.A. Tremont
    • Department of PhysicsTechnical University of Kaiserslautern
  • O. Casel
    • Department of PhysicsTechnical University of Kaiserslautern
  • D. Woll
    • Department of PhysicsTechnical University of Kaiserslautern
  • T. Ulm
    • Department of PhysicsTechnical University of Kaiserslautern
  • J.A. L’huillier
    • Department of PhysicsTechnical University of Kaiserslautern
  • R. Wallenstein
    • Department of PhysicsTechnical University of Kaiserslautern
Article

DOI: 10.1007/s00340-007-2586-x

Cite this article as:
Fuchs, H., Tremont, M., Casel, O. et al. Appl. Phys. B (2007) 87: 425. doi:10.1007/s00340-007-2586-x

Abstract

This paper reports on a mode-locked InGaAs master oscillator power amplifier (MOPA) system that generates at 920 nm 14-ps-long pulses with a repetition rate of 4.3 GHz and an average power of 2.7 W. Single-pass frequency doubling in a periodically poled KTP crystal provides 550 mW of blue 460-nm radiation. The power of the blue output, which corresponds to a conversion efficiency of more than 20%, was optimized by a detailed investigation of the influence of various system parameters like injection current and repetition rate on pulse power, pulse duration, and spectral shape of the infrared laser pulses.

Copyright information

© Springer-Verlag 2007