Applied Physics B

, Volume 86, Issue 3, pp 503–510

Single-frequency cw vertical external cavity surface emitting semiconductor laser at 1003 nm and 501 nm by intracavity frequency doubling

  • M. Jacquemet
  • M. Domenech
  • G. Lucas-Leclin
  • P. Georges
  • J. Dion
  • M. Strassner
  • I. Sagnes
  • A. Garnache
Article

DOI: 10.1007/s00340-006-2499-0

Cite this article as:
Jacquemet, M., Domenech, M., Lucas-Leclin, G. et al. Appl. Phys. B (2007) 86: 503. doi:10.1007/s00340-006-2499-0

Abstract

This work reports single-frequency laser oscillation at λ=1003.4 nm of a diode-pumped vertical external cavity surface-emitting semiconductor laser for metrological applications. A low thermal resistance of the semiconductor active component is achieved by solid-liquid interdiffusion bonding onto a SiC substrate. The spectro-temporal dynamics of the laser is theoretically studied. Experimentally, an output power of 1.7 W is demonstrated in free running operation, and up to 500 mW in a true single longitudinal mode. Furthermore, single-frequency laser emission at λ=501.7 nm is obtained by intracavity frequency doubling, resulting in a total output power as high as 62 mW.

Copyright information

© Springer-Verlag 2006

Authors and Affiliations

  • M. Jacquemet
    • 1
  • M. Domenech
    • 1
  • G. Lucas-Leclin
    • 1
  • P. Georges
    • 1
  • J. Dion
    • 2
  • M. Strassner
    • 2
  • I. Sagnes
    • 2
  • A. Garnache
    • 3
  1. 1.Laboratoire Charles Fabry de l’Institut d’Optique, CNRSUniv. Paris-SudPalaiseau CedexFrance
  2. 2.Laboratoire de Photonique et de NanostructuresMarcoussisFrance
  3. 3.Centre d’Electronique et de Micro-optoélectronique de Montpellier, CNRS UMR5507Universite Montpellier 2, Montpellier Cedex 5France