Applied Physics B

, Volume 87, Issue 1, pp 13–16

A novel THz source based on a two-color Nd:LSB microchip-laser and a LT-GaAsSb photomixer

Authors

    • Institute for Physics and Physical TechnologiesClausthal University of Technology
    • LaserApplicationCenterClausthal University of Technology
  • R. Wilk
    • Department of High-Frequency EngineeringTechnical University Braunschweig
  • W. Schippers
    • Institute for Physics and Physical TechnologiesClausthal University of Technology
  • S. Böttger
    • Institute for Physics and Physical TechnologiesClausthal University of Technology
  • D. Nodop
    • Institute for Physics and Physical TechnologiesClausthal University of Technology
  • T. Schossig
    • Institute for Physics and Physical TechnologiesClausthal University of Technology
  • W. Schade
    • Institute for Physics and Physical TechnologiesClausthal University of Technology
    • LaserApplicationCenterClausthal University of Technology
  • M. Mikulics
    • Department of High-Frequency EngineeringTechnical University Braunschweig
  • M. Koch
    • Department of High-Frequency EngineeringTechnical University Braunschweig
  • M. Walther
    • Fraunhofer Institute for Applied Solid-State Physics
  • H. Niemann
    • Physikalisch-Technische Bundesanstalt
  • B. Güttler
    • Physikalisch-Technische Bundesanstalt
Article

DOI: 10.1007/s00340-006-2492-7

Cite this article as:
Willer, U., Wilk, R., Schippers, W. et al. Appl. Phys. B (2007) 87: 13. doi:10.1007/s00340-006-2492-7

Abstract

A two-color Nd:LSB microchip-laser that simultaneously emits at 1061.3 nm and 1063.9 nm is used for photomixing. Since LT-GaAs which is typically utilized for photomixing cannot be excited efficiently with wavelengths exceeding 1 μm, LT-GaAsSb with a bandgap energy designed to match the laser emission is used here for the first time. With this system THz radiation at 0.7 THz is generated and detected with a bolometer.

Copyright information

© Springer-Verlag 2006