Applied Physics B

, Volume 84, Issue 3, pp 511–516

Thickness of SiO2 thin film on silicon wafer measured by dispersive white-light spectral interferometry

Authors

    • Department of PhysicsTechnical University Ostrava
  • D. Ciprian
    • Department of PhysicsTechnical University Ostrava
  • J. Luňáček
    • Department of PhysicsTechnical University Ostrava
  • M. Lesňák
    • Department of PhysicsTechnical University Ostrava
Article

DOI: 10.1007/s00340-006-2282-2

Cite this article as:
Hlubina, P., Ciprian, D., Luňáček, J. et al. Appl. Phys. B (2006) 84: 511. doi:10.1007/s00340-006-2282-2

Abstract

We present a white-light spectral interferometric technique for measuring the thickness of SiO2 thin film on a silicon wafer. The technique utilizes a slightly dispersive Michelson interferometer with a cube beam splitter and a fibre-optic spectrometer to record channelled spectra in two configurations. In the first, a standard configuration with two identical metallic mirrors, the recorded channelled spectrum is fitted to the theoretical one to determine the effective thickness of the beam splitter made of BK7 optical glass. In the second configuration one of the mirrors is replaced by SiO2 thin film on the silicon wafer and the recorded channelled spectrum is fitted to the theoretical one to determine the thin-film thickness. We consider multiple reflection within the thin-film structure, use the optical constants for all the materials involved in the set-up, and confirm very good agreement between theory and experiment. The technique is applied to four samples with various SiO2 film thicknesses.

Copyright information

© Springer-Verlag 2006