Applied Physics B

, Volume 84, Issue 3, pp 429–431

InGaAsP quantum-wells saturable absorber for diode-pumped passively Q-switched 1.3-μm lasers

  • A. Li
  • S.C. Liu
  • K.W. Su
  • Y.L. Liao
  • S.C. Huang
  • Y.F. Chen
  • K.F. Huang
Article

DOI: 10.1007/s00340-006-2247-5

Cite this article as:
Li, A., Liu, S., Su, K. et al. Appl. Phys. B (2006) 84: 429. doi:10.1007/s00340-006-2247-5

Abstract

We demonstrate the first use of InGaAsP quantum wells as a saturable absorber in the Q-switching of a diode-pumped Nd-doped 1.3 μm laser. The barrier layers of the InGaAsP quantum-well device are designed to be a strong absorber for the suppression of the transition channel at 1.06 μm. With an incident pump power of 1.8 W, an average output power of 160 mW with a Q-switched pulse width of 19 ns at a pulse repetition rate of 38 kHz was obtained.

Copyright information

© Springer-Verlag 2006

Authors and Affiliations

  • A. Li
    • 1
  • S.C. Liu
    • 1
  • K.W. Su
    • 1
  • Y.L. Liao
    • 1
  • S.C. Huang
    • 1
  • Y.F. Chen
    • 1
  • K.F. Huang
    • 1
  1. 1.Department of ElectrophysicsNational Chiao Tung UniversityHsinchuTaiwan

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