Applied Physics B

, Volume 81, Issue 8, pp 1097–1100

Continuous-wave high-power (320 mW) single mode operation of electronic vertically coupled InAs/GaAs quantum dot narrow-ridge-waveguide lasers

  • J.S. Wang
  • G. Lin
  • R.S. Hsiao
  • C.S. Yang
  • C.M. Lai
  • C.Y. Liang
  • H.Y. Liu
  • T.T. Chen
  • Y.F. Chen
  • J.Y. Chi
  • J.F. Chen
Article

DOI: 10.1007/s00340-005-1975-2

Cite this article as:
Wang, J., Lin, G., Hsiao, R. et al. Appl. Phys. B (2005) 81: 1097. doi:10.1007/s00340-005-1975-2

Abstract

High-power 3 μm-wide narrow-ridge-waveguide lasers with ten stacks of electronic vertically coupled InAs/GaAs quantum dots in the active region were demonstrated. Unlike that from conventional uncoupled InAs quantum dot lasers, a narrow lasing spectrum was observed because the carriers tunneled in the vertical direction. Continuous-wave operation in single lateral mode yielded a kink-free output power of 320 mW with an efficiency of 0.46 W/A , and a sensitivity of lasing wavelength to temperature of 0.28 nm/K.

Copyright information

© Springer-Verlag 2005

Authors and Affiliations

  • J.S. Wang
    • 1
  • G. Lin
    • 2
  • R.S. Hsiao
    • 2
    • 3
  • C.S. Yang
    • 3
  • C.M. Lai
    • 2
  • C.Y. Liang
    • 2
  • H.Y. Liu
    • 2
  • T.T. Chen
    • 4
  • Y.F. Chen
    • 4
  • J.Y. Chi
    • 2
  • J.F. Chen
    • 3
  1. 1.Department of PhysicsChung Yuan Christian UniversityChung-LiTaiwan
  2. 2.Industrial Technology Research InstituteHsinchuTaiwan
  3. 3.Department of ElectrophysicsNational Chiao Tung UniversityHsinchuTaiwan
  4. 4.Department of PhysicsNational Taiwan UniversityTaipeiTaiwan