Applied Physics B

, Volume 79, Issue 3, pp 279–283

Atom lithography with two-dimensional optical masks

  • S.J.H. Petra
  • K.A.H. van Leeuwen
  • L. Feenstra
  • W. Hogervorst
  • W. Vassen
Article

DOI: 10.1007/s00340-004-1569-4

Cite this article as:
Petra, S., van Leeuwen, K., Feenstra, L. et al. Appl. Phys. B (2004) 79: 279. doi:10.1007/s00340-004-1569-4
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Abstract

With a two-dimensional (2D) optical mask at λ=1083 nm, nanoscale patterns are created for the first time in an atom lithography process using metastable helium atoms. The internal energy of the atoms is used to locally damage a hydrophobic resist layer, which is removed in a wet etching process. Experiments have been performed with several polarizations for the optical mask, resulting in different intensity patterns, and corresponding nanoscale structures. The results for a linear polarized light field show an array of holes with a diameter of 260 nm, in agreement with a computed pattern. With a circularly polarized light field a line pattern is observed with a spacing of λ/20.5=766 nm. Simulations taking into account many possible experimental imperfections can not explain this pattern.

Copyright information

© Springer-Verlag 2004

Authors and Affiliations

  • S.J.H. Petra
    • 1
  • K.A.H. van Leeuwen
    • 1
  • L. Feenstra
    • 1
  • W. Hogervorst
    • 1
  • W. Vassen
    • 1
  1. 1.Atomic and Laser Physics GroupLaser Centre Vrije UniversiteitHV AmsterdamThe Netherlands