Nanocrystal-size-sensitive third-harmonic generation in nanostructured silicon
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- Golovan, L., Kuznetsova, L., Fedotov, A. et al. Appl Phys B (2003) 76: 429. doi:10.1007/s00340-003-1121-y
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Third-harmonic generation (THG) in reflection geometry was studied in nanostructured silicon layers grown by electrochemical porosifying of p-type (110) silicon substrates. An order of magnitude enhancement of the THG efficiency compared to crystalline silicon (c-Si) was observed for the samples prepared on a highly doped substrate, whereas for the samples grown on a low-doped substrate the THG was much less efficient than for c-Si. The finding is discussed in terms of fluctuations of the electric field of the pump-laser irradiation in the layers of anisotropically distributed silicon nanocrystals.