Applied Physics B

, Volume 76, Issue 4, pp 429–433

Nanocrystal-size-sensitive third-harmonic generation in nanostructured silicon

  • L.A. Golovan
  • L.P. Kuznetsova
  • A.B. Fedotov
  • S.O. Konorov
  • D.A. Sidorov-Biryukov
  • V.Y. Timoshenko
  • A.M. Zheltikov
  • P.K. Kashkarov

DOI: 10.1007/s00340-003-1121-y

Cite this article as:
Golovan, L., Kuznetsova, L., Fedotov, A. et al. Appl Phys B (2003) 76: 429. doi:10.1007/s00340-003-1121-y

Abstract.

Third-harmonic generation (THG) in reflection geometry was studied in nanostructured silicon layers grown by electrochemical porosifying of p-type (110) silicon substrates. An order of magnitude enhancement of the THG efficiency compared to crystalline silicon (c-Si) was observed for the samples prepared on a highly doped substrate, whereas for the samples grown on a low-doped substrate the THG was much less efficient than for c-Si. The finding is discussed in terms of fluctuations of the electric field of the pump-laser irradiation in the layers of anisotropically distributed silicon nanocrystals.

PACS: 42.65.Ky; 78.67.Bf

Copyright information

© Springer-Verlag 2003

Authors and Affiliations

  • L.A. Golovan
    • 1
  • L.P. Kuznetsova
    • 1
  • A.B. Fedotov
    • 1
  • S.O. Konorov
    • 1
  • D.A. Sidorov-Biryukov
    • 1
  • V.Y. Timoshenko
    • 1
  • A.M. Zheltikov
    • 1
  • P.K. Kashkarov
    • 1
  1. 1.Moscow State M.V. Lomonosov University, Department of Physics, 119992 Moscow, RussiaRU