Applied Physics B

, Volume 74, Issue 7, pp 671–675

Second-harmonic spectroscopy of electronic structure of Si/SiO2 multiple quantum wells

  • T.V. Dolgova
  • V.G. Avramenko
  • A.A. Nikulin
  • G. Marowsky
  • A.F. Pudonin
  • A.A. Fedyanin
  • O.A. Aktsipetrov
Article

DOI: 10.1007/s00340-002-0916-6

Cite this article as:
Dolgova, T., Avramenko, V., Nikulin, A. et al. Appl Phys B (2002) 74: 671. doi:10.1007/s00340-002-0916-6

Abstract.

Size effects in the resonant nonlinear optical response of amorphous Si/SiO2 multiple quantum wells (MQW) are studied by second-harmonic generation (SHG) spectroscopy in a spectral interval of second-harmonic photon energies from 2.5 to 3.4 eV. The sensitivity of SHG spectroscopy to thickness-dependent electronic structure (sub-band energy position and density of states line shape) of MQW is demonstrated. A monotonic red shift of central energies of SHG resonances by 120 m eV upon increase of the well thickness from 2.5 to 10 Å is observed. This is interpreted as a size dependence of the position of singularities in the combined density of states for a 2D gas of electrons moving in an effective potential well. It is shown that, for agreement with experiment, the simplest (rectangular) shape of the well should be modified in order to take into account the lattice-potential distortion at the interfaces.

PACS: 73.20.Dx; 78.66.-w; 42.65 Ky 

Copyright information

© Springer-Verlag 2002

Authors and Affiliations

  • T.V. Dolgova
    • 1
  • V.G. Avramenko
    • 1
  • A.A. Nikulin
    • 1
  • G. Marowsky
    • 2
  • A.F. Pudonin
    • 3
  • A.A. Fedyanin
    • 1
  • O.A. Aktsipetrov
    • 1
  1. 1.Department of Physics, Moscow State University, 119992 Moscow, RussiaRU
  2. 2.Laser-Laboratorium Göttingen e.V., 37077 Göttingen, GermanyDE
  3. 3.Lebedev Physical Institute, Russian Academy of Science, 177924 Moscow, RussiaRU