Applied Physics A

, Volume 72, Issue 3, pp 377–379

F2-laser ablation patterning of dielectric layers

Authors

  • D. Schäfer
    • Laser Laboratorium Göttingen, Hans-Adolf-Krebs-Weg 1, 37077 Göttingen, Germany
  • J. Ihlemann
    • Laser Laboratorium Göttingen, Hans-Adolf-Krebs-Weg 1, 37077 Göttingen, Germany
  • G. Marowsky
    • Laser Laboratorium Göttingen, Hans-Adolf-Krebs-Weg 1, 37077 Göttingen, Germany
  • P.R. Herman
    • Department of Electrical and Computer Engineering, University of Toronto, Ontario, M5S 3G4, Canada
Rapid communication

DOI: 10.1007/s003390100779

Cite this article as:
Schäfer, D., Ihlemann, J., Marowsky, G. et al. Appl Phys A (2001) 72: 377. doi:10.1007/s003390100779

Abstract.

Spatially defined patterning of multi-layer dielectric optical systems by laser-induced ablation is demonstrated. A 49-layer high-reflectivity mirror for 193-nm light was irradiated with F2-laser light through the CaF2-substrate to cleanly remove the whole dielectric stack by rear-sided ablation. The 157-nm light is absorbed efficiently by dielectric layers such as SiO2 and Al2O3 that are typically used for ultraviolet (UV) transmission at 193-nm and longer wavelengths. Thus it is possible to ablate highly reflective UV-laser mirrors (HR 193 nm) and to create dielectric masks that withstand high power levels at 193 nm. A single 157-nm pulse with a fluence of less than 500 mJ/cm2 is sufficient to cleanly ablate the whole layer stack with sharp edges and without debris deposition.

PACS: 81.65.Cf; 78.20

Copyright information

© Springer-Verlag 2001