Applied Physics A

, Volume 72, Issue 3, pp 373–375

Characterization of a growth-front interface in a HPHT-grown diamond crystal by transmission electron microscopy

  • L.W. Yin
  • M.S. Li
  • Z.D. Zou
  • D.S. Sun
  • Z.Y. Hao
  • Z.G. Gong
  • Z.Y. Yao
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DOI: 10.1007/s003390100743

Cite this article as:
Yin, L., Li, M., Zou, Z. et al. Appl Phys A (2001) 72: 373. doi:10.1007/s003390100743

Abstract.

The growth-front interface of a diamond single crystal, which was grown from the Fe-Ni-C system under high pressure and high temperature (HPHT), has been directly observed by transmission electron microscopy (TEM) for the first time. The presence of a cellular interface suggests that the diamond is grown from solution and there exists a narrow supercooling zone in front of the solid–liquid interface. Diamond-growth parallel layers were also found, which indicates that the diamond grows from solution layer by layer. It provides direct evidence that the diamond is synthesized through graphite dissolution and transformation to subcritical diamond particles in a molten catalyst, diamond subcritical particle connection to form diamond clusters, diffusion of the diamond clusters to the growing diamond, and unification of the diamond clusters on the growing diamond crystal.

PACS: 81.10.A; 81.10.Dn; 61.16.Bg 

Copyright information

© Springer-Verlag 2001

Authors and Affiliations

  • L.W. Yin
    • 1
  • M.S. Li
    • 1
  • Z.D. Zou
    • 1
  • D.S. Sun
    • 1
  • Z.Y. Hao
    • 2
  • Z.G. Gong
    • 1
  • Z.Y. Yao
    • 1
  1. 1.College of Materials Science and Engineering, Shandong University, Jinan 250061, P.R. ChinaCN
  2. 2.National Key Laboratory for Superhard Materials, Jilin University, Changchun 130012, P.R. ChinaCN

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