Skip to main content
SpringerLink
Log in

STM writing of artificial nanostructures in ultrathin PMMA and SAM resists and subsequent pattern transfer in a Mo/Si multilayer by reactive ion etching

  • Regular paper
  • Published:
Applied Physics A Aims and scope Submit manuscript

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

Author information

Authors and Affiliations

  1. Molekül– und Oberflächenphysik, Universität Bielefeld, 33615 Bielefeld, Universitätsstr. 25, Germany (Fax: +49-521/106-6001, E-mail: jessica@hrz.uni–bielefeld.de, ldreesko@hrz.uni–bielefeld.de), , , , , , DE

    J. Hartwich, L. Dreeskornfeld, V. Heisig, S. Rahn, O. Wehmeyer, U. Kleineberg & U. Heinzmann

Authors
  1. J. Hartwich
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. L. Dreeskornfeld
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. V. Heisig
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. S. Rahn
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. O. Wehmeyer
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. U. Kleineberg
    View author publications

    You can also search for this author in PubMed Google Scholar

  7. U. Heinzmann
    View author publications

    You can also search for this author in PubMed Google Scholar

Additional information

Received: 25 July 1997/Accepted: 1 October 1997

Rights and permissions

Reprints and permissions

About this article

Cite this article

Hartwich, J., Dreeskornfeld, L., Heisig, V. et al. STM writing of artificial nanostructures in ultrathin PMMA and SAM resists and subsequent pattern transfer in a Mo/Si multilayer by reactive ion etching . Appl Phys A 66 (Suppl 1), S685–S688 (1998). https://doi.org/10.1007/s003390051222

Download citation

  • Issue Date:

  • DOI: https://doi.org/10.1007/s003390051222

Keywords

Search

Navigation