Regular paper

Applied Physics A

, Volume 69, Issue 3, pp 305-308

First online:

Synthesis, integration, and electrical properties of individual single-walled carbon nanotubes

  • J. KongAffiliated withDepartment of Chemistry, Stanford University, Stanford, CA 94305, USA (Fax: +1-650/725-0259, E-mail: hdai@chem.stanford.edu)
  • , C. ZhouAffiliated withDepartment of Chemistry, Stanford University, Stanford, CA 94305, USA (Fax: +1-650/725-0259, E-mail: hdai@chem.stanford.edu)
  • , A. MorpurgoAffiliated withDepartment of Physics, Stanford University, Stanford, CA 94305, USA
  • , H.T. SohAffiliated withE.L. Ginzton Laboratory, Stanford University, Stanford, CA 94305, USA
  • , C.F. QuateAffiliated withE.L. Ginzton Laboratory, Stanford University, Stanford, CA 94305, USA
  • , C. MarcusAffiliated withDepartment of Physics, Stanford University, Stanford, CA 94305, USA
  • , H. DaiAffiliated withDepartment of Chemistry, Stanford University, Stanford, CA 94305, USA (Fax: +1-650/725-0259, E-mail: hdai@chem.stanford.edu)

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Abstract.

High-quality single-walled carbon nanotubes (SWNTs) are synthesized by chemical vapor deposition (CVD) of methane on silicon-dioxide substrates at controlled locations using patterned catalytic islands. With the synthesized nanotube chips, microfabrication techniques are used to reliably contact individual SWNTs and obtain low contact resistance. The combined chemical synthesis and microfabrication approaches enable systematic characterization of electron transport properties of a large number of individual SWNTs. Results of electrical properties of representative semiconducting and metallic SWNTs are presented. The lowest two-terminal resistance for individual metallic SWNTs (≈5 μm long) is ≈16.5 kΩ measured at 4.2 K.

PACS: 72.80.Rj; 73.61.Wp; 81.05.Tp; 81.15.Gh