Applied Physics A

, Volume 67, Issue 3, pp 335–342

The incorporation of Nickel and Phosphorus dopants into Boron-Carbon alloy thin films

  • D.N. McIlroy
  • S.-D. Hwang
  • K. Yang
  • N. Remmes
  • P.A. Dowben
  • A.A. Ahmad
  • N.J. Ianno
  • J.Z. Li
  • J.Y. Lin
  • H.X. Jiang
Regular paper

DOI: 10.1007/s003390050780

Cite this article as:
McIlroy, D., Hwang, SD., Yang, K. et al. Appl Phys A (1998) 67: 335. doi:10.1007/s003390050780
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C) alloy thin films grown by plasma-enhanced chemical vapor deposition have been examined. The Ni-doped boron–carbon alloys were grown using closo-1,2-dicarbadodecaborane (C2B10H12) as the boron–carbon source compound and nickelocene(Ni(C5H5)2) as the nickel source. The phosphorus-doped alloys were grown using the single-source compound: dimeric chloro-phospha(III)-carborane ([C2B10H10PCl]2). Nickel doping increased the conductivity, relative to undoped B5C, by six orders of magnitude from 10-9 to 10-3 (Ω cm)-1 and transformed the material from a p-type semiconductor to an n-type. Phosphorus doping decreased the conductivity, relative to undoped B5C, by two orders of magnitude and increased the band gap from 0.9 eV for the undoped material to 2.6 eV. Infrared absorption spectra of the nickel- and phosphorus-doped B5C alloys were relatively unchanged from those of undoped B5C. X-ray diffraction suggests that the phosphorus-doped material may be a different polytype from the Ni-doped and undoped B5C alloys.

PACS: 85.30.-z; 85.30.De; 68.55.Ln; 72.20.-I 

Copyright information

© Springer-Verlag 1998

Authors and Affiliations

  • D.N. McIlroy
    • 1
  • S.-D. Hwang
    • 2
  • K. Yang
    • 2
  • N. Remmes
    • 2
  • P.A. Dowben
    • 2
  • A.A. Ahmad
    • 3
  • N.J. Ianno
    • 3
  • J.Z. Li
    • 4
  • J.Y. Lin
    • 4
  • H.X. Jiang
    • 4
  1. 1.Department of Physics, University of Idaho, Moscow, ID 83844-0903US
  2. 2.Center for Materials Research and Analysis and the Department of Physics and Astronomy, University of Nebraska-Lincoln, Lincoln, NE 68588-0111US
  3. 3.Center for Microelectronics and Optical Materials and the Department of Electrical Engineering, University of Nebraska-Lincoln, Lincoln, NE 68588-0511US
  4. 4.Department of Physics, Kansas State University, Manhattan, KS 66506-2601US

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