Applied Physics A

, Volume 65, Issue 2, pp 195–198

Green/blue light emission and chemical feature of nanocrystalline silicon embedded in silicon-oxide thin film

Authors

  • M. Zhu
    • National Laboratory for Superlattices and Microstructures, P.O.Box 912, Beijing and Department of Physics, Graduate School, University of Science and Technology of China, P.O.Box 3908, Beijing 100039, China (E-mail: mfzhu@sun.ihep.ac.cn)
  • G. Chen
    • National Laboratory for Superlattices and Microstructures, P.O.Box 912, Beijing and Department of Physics, Graduate School, University of Science and Technology of China, P.O.Box 3908, Beijing 100039, China (E-mail: mfzhu@sun.ihep.ac.cn)
  • P. Chen
    • Institute of Microelectronics, Tsinghua University, Beijing 100084, China

DOI: 10.1007/s003390050565

Cite this article as:
Zhu, M., Chen, G. & Chen, P. Appl Phys A (1997) 65: 195. doi:10.1007/s003390050565

2

in the range of annealing temperatures used. The PL intensity, weight of the Si4+ states, and the volume fraction of Si nanocrystals exhibit a large increase as Ta>750 °C. The PL peak position is independent of the annealing temperature (Ta). From our observations, the green/blue light emission is related to the defects.

PACS: 78.55; 78.65; 79.60

Copyright information

© Springer-Verlag 1997