Applied Physics A

, Volume 64, Issue 5, pp 423–430

Characterization of p-n junctions and surface-states on silicon devices by photoemission electron microscopy

Authors

  • M. Giesen
    • Physics Department, University of Maryland, College Park, MD 20742-4111, USA (E-mail: m.giesen@fz-juelich.de)
  • R.J. Phaneuf
    • Physics Department, University of Maryland, College Park, MD 20742-4111, USA (E-mail: m.giesen@fz-juelich.de)
  • E.D. Williams
    • Physics Department, University of Maryland, College Park, MD 20742-4111, USA (E-mail: m.giesen@fz-juelich.de)
  • T.L. Einstein
    • Physics Department, University of Maryland, College Park, MD 20742-4111, USA (E-mail: m.giesen@fz-juelich.de)
  • H. Ibach
    • Institut für Grenzflächenforschung und Vakuumphysik, Forschungszentrum Jülich, D 52425 Jülich, Germany

DOI: 10.1007/s003390050500

Cite this article as:
Giesen, M., Phaneuf, R., Williams, E. et al. Appl Phys A (1997) 64: 423. doi:10.1007/s003390050500

PACS: 85.30; 73.20; 79.60

Copyright information

© Springer-Verlag 1997