Applied Physics A

, Volume 72, Issue 1, pp 89–94

Ultrashort-pulse laser ablation of indium phosphide in air

Authors

  • J. Bonse
    • Laboratory for Thin Film Technology, Federal Institute for Materials Research and Testing, Unter den Eichen 87, 12205 Berlin, Germany (Fax: +49-30/8104-1827, E-mail: joern.bonse@bam.de)
  • J.M. Wrobel
    • Department of Physics, University of Missouri – KC, Kansas City, MO 64110, USA
  • J. Krüger
    • Laboratory for Thin Film Technology, Federal Institute for Materials Research and Testing, Unter den Eichen 87, 12205 Berlin, Germany (Fax: +49-30/8104-1827, E-mail: joern.bonse@bam.de)
  • W. Kautek
    • Laboratory for Thin Film Technology, Federal Institute for Materials Research and Testing, Unter den Eichen 87, 12205 Berlin, Germany (Fax: +49-30/8104-1827, E-mail: joern.bonse@bam.de)

DOI: 10.1007/s003390000596

Cite this article as:
Bonse, J., Wrobel, J., Krüger, J. et al. Appl Phys A (2001) 72: 89. doi:10.1007/s003390000596

Abstract.

Ablation of indium phosphide wafers in air was performed with low repetition rate ultrashort laser pulses (130 fs, 10 Hz) of 800 nm wavelength. The relationships between the dimensions of the craters and the ablation parameters were analyzed. The ablation threshold fluence depends on the number of pulses applied to the same spot. The single-pulse ablation threshold value was estimated to be φth(1)=0.16 J/cm2. The dependence of the threshold fluence on the number of laser pulses indicates an incubation effect. Morphological and chemical changes of the ablated regions were characterized by means of scanning electron microscopy and Auger electron spectroscopy.

PACS: 79.20.D; 42.70.Q; 89.20

Copyright information

© Springer-Verlag 2000