Applied Physics A

, Volume 115, Issue 4, pp 1115–1119

Performance enhancement of blue light-emitting diodes by adjusting the p-type doped last barrier

Rapid communication

DOI: 10.1007/s00339-014-8393-4

Cite this article as:
Lei, Y., Liu, Z., He, M. et al. Appl. Phys. A (2014) 115: 1115. doi:10.1007/s00339-014-8393-4

Abstract

Blue light-emitting diodes (LEDs) with different p-doping concentrations in the last barrier have been studied numerically. The energy band diagrams, carrier concentrations, internal quantum efficiency and light output power are investigated using APSYS software. The simulation results show that the LED structure with p-doping in the last barrier has a better hole-injection efficiency and confinement of electron leakage over the structure with the last undoped GaN barrier due to enhancement of the holes’ injection and the electrons’ confinement. As a result, the efficiency droop is markedly improved, and the light output power is greatly enhanced when a larger p-doping amount is centralised in the last barrier.

Copyright information

© Springer-Verlag Berlin Heidelberg 2014

Authors and Affiliations

  1. 1.Laboratory of Nanophotonic Functional Materials and Devices, Institute of Optoelectronic Materials and TechnologySouth China Normal UniversityGuangzhouPeople’s Republic of China
  2. 2.Center for Semiconductor LightingChinese Academy of SciencesBeijingPeople’s Republic of China

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