From holes to sponge at irradiated Ge surfaces with increasing ion energy—an effect of defect kinetics?
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- Böttger, R., Heinig, K., Bischoff, L. et al. Appl. Phys. A (2013) 113: 53. doi:10.1007/s00339-013-7911-0
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We show that hole patterns and sponge-like layers at irradiated Ge surfaces originate from the same driving force, namely the kinetics of ion beam induced defects in the amorphous Ge surface layer. Ge hole patterns reported earlier for irradiation with low energy (5 keV) Ga+ ions were reproduced for low energy Bi+ but also for Ge+ self-irradiation, which proves that the dominating driving force for morphology evolution cannot originate from the implanted impurities. At higher ion energies the well-known formation of sponge-like Ge surface layers after heavy ion irradiation was found for Bi+ irradiation and Ge+ self-irradiation, also. The transition from smooth surfaces via hole patterns to sponge-like morphologies with increasing ion energies was studied in detail. A model based on the kinetics of ion beam induced defects was developed and implemented in 3D kinetic Monte Carlo simulations, which reproduce the transition from hole patterns to sponge-like layers with increasing ion energy.