, Volume 112, Issue 2, pp 457-462

Extended homogeneous nanoripple formation during interaction of high-intensity few-cycle pulses with a moving silicon wafer

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Abstract

We report the study of extended nanoripple structures formed during the interaction of high-intensity 3.5 fs pulses with a moving silicon wafer. The optimization of laser intensity (8×1013 W cm−2) and sample moving velocity (1 mm s−1) allowed the formation of long strips (∼5 mm) of homogeneous nanoripples along the whole area of laser ablation. The comparison of nanoripples produced on the silicon surfaces by few- and multi-cycle pulses is presented. We find that few-cycle pulses produce sharp and more homogenous structures than multi-cycle pulses.