Applied Physics A

, Volume 108, Issue 4, pp 895–900

Enhanced visible-light photoactivity of La-doped ZnS thin films

Article

DOI: 10.1007/s00339-012-6990-7

Cite this article as:
Chen, Y., Huang, G., Huang, W. et al. Appl. Phys. A (2012) 108: 895. doi:10.1007/s00339-012-6990-7

Abstract

ZnS and La-doped ZnS thin films were successfully synthesized using chemical-bath deposition on conductive glass substrates. The effects of La-doping on the surface morphology, composition, structure and optical properties of the films were investigated. The photocatalytic performances of undoped and doped ZnS films were evaluated by photodegrading methyl orange aqueous solution under both ultraviolet-light and visible-light irradiation. The results show that the stoichiometry ratio and the properties of ZnS can be tailored by the La-doping concentration. An appropriate amount of La-doping effectively extends the absorption edge to visible-light region, which leads to the significant enhancement of the photocatalytic activity of ZnS thin films under visible-light irradiation. The mechanism of enhanced visible-light photoactivity by La-doping is briefly discussed. The present study provides a simple method for designing the highly efficient semiconductor photocatalysts that can effectively utilize sunlight.

Copyright information

© Springer-Verlag 2012

Authors and Affiliations

  1. 1.Department of Applied PhysicsHunan UniversityChangshaChina
  2. 2.Key Laboratory for Micro-Nano Physics and Technology of Hunan ProvinceHunan UniversityChangshaChina