Applied Physics A

, Volume 106, Issue 3, pp 679–685

Correlation between implantation defects and dopants in Fe-implanted SiC

  • A. Declémy
  • A. Debelle
  • C. Dupeyrat
  • L. Thomé
  • I. Monnet
  • D. Eyidi
Article

DOI: 10.1007/s00339-011-6660-1

Cite this article as:
Declémy, A., Debelle, A., Dupeyrat, C. et al. Appl. Phys. A (2012) 106: 679. doi:10.1007/s00339-011-6660-1

Abstract

SiC single crystals were implanted with Fe ions and the effects of implantation temperature, Fe concentration, and subsequent swift heavy ion irradiation on both dopant and damage depth distributions were evaluated by using RBS and channelling techniques. It is found that an increase of the implantation temperature above the threshold temperature for amorphization can lead to the formation of a broad layer (∼50 nm) containing a large concentration of implanted Fe atoms (∼2 at.%) but almost free of implantation defects. This particular configuration is likely due to dynamic annealing during implantation combined with defect annihilation at the surface. It is only observed when the implanted species concentration does not exceed a critical value (which lies between 2 and 5 at.% in the present system). Post-implantation swift heavy ion irradiation leads to a further decrease of the damage level, while the Fe distribution is not affected. The Fe substitutional fraction has been evaluated in the different tested conditions. A maximum value of ∼50% is found when implantation is performed at the temperature above that required to prevent amorphization (470 K in the present system). Swift-heavy ion irradiation seems to induce Fe atoms relocation at substitutional positions.

Copyright information

© Springer-Verlag 2011

Authors and Affiliations

  • A. Declémy
    • 1
  • A. Debelle
    • 2
  • C. Dupeyrat
    • 1
  • L. Thomé
    • 2
  • I. Monnet
    • 3
  • D. Eyidi
    • 1
  1. 1.Département de Physique et Mécanique des Matériaux, SP2MI, Téléport 2Institut Pprime, UPR 3346, CNRS, Université de Poitiers, ENSMAFUTUROSCOPE-Chasseneuil CedexFrance
  2. 2.Centre de spectrométrie Nucléaire et de Spectrométrie de Masse (CSNSM)Univ. Paris-Sud, CNRS-IN2P3Orsay-CedexFrance
  3. 3.Centre de Recherche sur les Matériaux, les Ions et la Photonique (CIMAP)CEA-CNRS-ENSICAENCaen Cedex 5France