Applied Physics A

, Volume 104, Issue 4, pp 1189–1194

Local current–voltage behaviors of preferentially and randomly textured Cu(In,Ga)Se2 thin films investigated by conductive atomic force microscopy

Authors

  • R. H. Shin
    • Department of PhysicsEwha Womans University
    • Department of PhysicsEwha Womans University
    • Department of PhysicsEwha Womans University
    • Department of Chemistry and NanosciencesEwha Womans University
  • Jae Ho Yun
    • Korea Institute of Energy Research
  • S. Ahn
    • Korea Institute of Energy Research
Article

DOI: 10.1007/s00339-011-6408-y

Cite this article as:
Shin, R.H., Jo, W., Kim, D. et al. Appl. Phys. A (2011) 104: 1189. doi:10.1007/s00339-011-6408-y

Abstract

Electrical transport properties on polycrystalline Cu(In,Ga)Se2 (CIGS) (Ga/(In+Ga) ≈35%) thin films were examined by conductive atomic force microscopy. The CIGS thin films with a (112) preferential or random texture were deposited on Mo-coated glass substrates. Triangular pyramidal grain growths were observed in the CIGS thin films preferentially textured to the (112) planes. Current maps of the CIGS surface were acquired with a zero or non-zero external voltage bias. The contrast of the images on the grain boundaries and intragrains displayed the conduction path in the materials. Local current–voltage measurements were performed to evaluate the charge conduction properties of the CIGS thin films.

Copyright information

© Springer-Verlag 2011