, Volume 102, Issue 4, pp 891-895,
Open Access This content is freely available online to anyone, anywhere at any time.
Date: 05 Feb 2011

Molecular dynamics simulations of oxide memristors: thermal effects

Abstract

We have extended our recent molecular-dynamic simulations of memristors to include the effect of thermal inhomogeneities on mobile ionic species appearing during operation of the device. Simulations show a competition between an attractive short-ranged interaction between oxygen vacancies and an enhanced local temperature in creating/destroying the conducting oxygen channels. Such a competition would strongly affect the performance of the memristive devices.