Molecular dynamics simulations of oxide memristors: thermal effects
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- Savel’ev, S.E., Alexandrov, A.S., Bratkovsky, A.M. et al. Appl. Phys. A (2011) 102: 891. doi:10.1007/s00339-011-6293-4
We have extended our recent molecular-dynamic simulations of memristors to include the effect of thermal inhomogeneities on mobile ionic species appearing during operation of the device. Simulations show a competition between an attractive short-ranged interaction between oxygen vacancies and an enhanced local temperature in creating/destroying the conducting oxygen channels. Such a competition would strongly affect the performance of the memristive devices.