Applied Physics A

, Volume 102, Issue 4, pp 891–895

Molecular dynamics simulations of oxide memristors: thermal effects

  • S. E. Savel’ev
  • A. S. Alexandrov
  • A. M. Bratkovsky
  • R. Stanley Williams
Open AccessArticle

DOI: 10.1007/s00339-011-6293-4

Cite this article as:
Savel’ev, S.E., Alexandrov, A.S., Bratkovsky, A.M. et al. Appl. Phys. A (2011) 102: 891. doi:10.1007/s00339-011-6293-4

Abstract

We have extended our recent molecular-dynamic simulations of memristors to include the effect of thermal inhomogeneities on mobile ionic species appearing during operation of the device. Simulations show a competition between an attractive short-ranged interaction between oxygen vacancies and an enhanced local temperature in creating/destroying the conducting oxygen channels. Such a competition would strongly affect the performance of the memristive devices.

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© The Author(s) 2011

Authors and Affiliations

  • S. E. Savel’ev
    • 1
  • A. S. Alexandrov
    • 1
    • 2
  • A. M. Bratkovsky
    • 2
  • R. Stanley Williams
    • 2
  1. 1.Department of PhysicsLoughborough UniversityLoughboroughUK
  2. 2.Hewlett-Packard LaboratoriesPalo AltoUSA