Impact of amorphous titanium oxide film on the device stability of Al/TiO2/Al resistive memory
- First Online:
- Cite this article as:
- Jeong, H.Y., Kim, S.K., Lee, J.Y. et al. Appl. Phys. A (2011) 102: 967. doi:10.1007/s00339-011-6278-3
- 302 Downloads
We have investigated the role of amorphous titanium oxide film in the reliable bipolar resistive switching of Al/TiO2/Al resistive random access memory devices. As TiO2 deposition temperature decreased, a more stable endurance characteristic was obtained. We proposed that the degradation of the bipolar resistive switching property of Al/TiO2/Al devices is closely related to the imperfect migration of oxygen ions between the top insulating interface layer and the oxygen-deficient titanium oxide during the set and reset operations. In addition, the dependence of the TiO2 film thickness on the switching property was also studied. As the thickness of the film increased, a reduction in the resistance of the high resistance state rapidly appeared. We attribute the improved endurance performance of thin and low-temperature grown TiO2 devices to the amorphous state with a low film density.