Applied Physics A

, Volume 102, Issue 2, pp 469–475

Structure and electrical properties of p-type twin ZnTe nanowires

  • Shanying Li
  • Yang Jiang
  • Di Wu
  • Binbin Wang
  • Yugang Zhang
  • Junwei Li
  • Xinmei Liu
  • Honghai Zhong
  • Lei Chen
  • Jiansheng Jie
Article

DOI: 10.1007/s00339-010-6242-7

Cite this article as:
Li, S., Jiang, Y., Wu, D. et al. Appl. Phys. A (2011) 102: 469. doi:10.1007/s00339-010-6242-7

Abstract

Resonant tunneling is firstly found in twin p-type ZnTe nanowire field-effect transistors. The twin ZnTe nanowires are synthesized via the thermal evaporation process. X-ray diffraction and high-resolution transmission electron microscopy characterization indicate that the as-grown twin nanowire has a zinc-blende crystal structure with an integrated growth direction of [11-1]. The twin plane is (11-1) and the angle between the mirror symmetrical planes is 141°. The formation of twins is attributed to the surface tension from the eutectic liquid droplet. Field-effect transistors based on single ZnTe twin nanowire are constructed, the corresponding electrical measurements demonstrate that the twin nanowires have a p-type conductivity with a mobility (μh) of 0.11 cm2 V−1 S−1, and a carrier concentration (nh) of 1.1×1017 cm−3. Significantly, the negative differential resistance with a peak-to-valley current ratio of about 1.3 is observed in p-type twin ZnTe nanowire field-effect transistors at room temperature. As the periodic barriers produced in the periodic twin interfaces can form multi-barrier and multi-well along one-dimensional direction. The multibarrier can be modulated under external electrical field. When the resonant condition is met, the space charge will be enhanced with the inherent feedback mechanism, and the resonant tunneling will occur.

Copyright information

© Springer-Verlag 2011

Authors and Affiliations

  • Shanying Li
    • 1
    • 2
  • Yang Jiang
    • 1
  • Di Wu
    • 1
  • Binbin Wang
    • 1
  • Yugang Zhang
    • 1
    • 3
  • Junwei Li
    • 1
  • Xinmei Liu
    • 1
  • Honghai Zhong
    • 1
  • Lei Chen
    • 1
  • Jiansheng Jie
    • 3
  1. 1.School of Materials Science and EngineeringHefei University of TechnologyHefeiPeople’s Republic of China
  2. 2.Department of Chemical EngineeringHenan University of Urban ConstructionPingdingshanPeople’s Republic of China
  3. 3.School of Electronic Science and Applied PhysicsHefei University of TechnologyHefeiPeople’s Republic of China