Article

Applied Physics A

, Volume 104, Issue 1, pp 239-245

First online:

Influence of implantation dose on electroluminescence from Si-implanted silicon nitride thin films

  • Z. H. CenAffiliated withSchool of Electrical and Electronic Engineering, Nanyang Technological University Email author 
  • , T. P. ChenAffiliated withSchool of Electrical and Electronic Engineering, Nanyang Technological University Email author 
  • , L. DingAffiliated withInstitute of Microelectronics
  • , Z. LiuAffiliated withSchool of Electrical and Electronic Engineering, Nanyang Technological University
  • , J. I. WongAffiliated withSchool of Electrical and Electronic Engineering, Nanyang Technological University
  • , M. YangAffiliated withSchool of Electrical and Electronic Engineering, Nanyang Technological University
  • , W. P. GohAffiliated withInstitute of Materials Research and Engineering
  • , S. FungAffiliated withDepartment of Physics, The University of Hong Kong

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Abstract

Strong visible electroluminescence (EL) with electrically tunable colors from violet to white has been observed from Si-implanted silicon nitride thin films. Influence of the implanted Si ion dose on both the current conduction and EL properties has been studied. With a larger excess Si concentration, the carrier transport is enhanced leading to a higher EL intensity, but the light emission efficiency is reduced. On the other hand, the increase of the excess Si concentration causes redshifts in the major EL bands and improves the transition of the EL colors with increasing current. The excess Si concentration is also found to have a significant influence on the EL degradation. These findings are important to the application of the Si-implanted thin films in light emitting devices.