Applied Physics A

, Volume 104, Issue 1, pp 239–245

Influence of implantation dose on electroluminescence from Si-implanted silicon nitride thin films


DOI: 10.1007/s00339-010-6117-y

Cite this article as:
Cen, Z.H., Chen, T.P., Ding, L. et al. Appl. Phys. A (2011) 104: 239. doi:10.1007/s00339-010-6117-y


Strong visible electroluminescence (EL) with electrically tunable colors from violet to white has been observed from Si-implanted silicon nitride thin films. Influence of the implanted Si ion dose on both the current conduction and EL properties has been studied. With a larger excess Si concentration, the carrier transport is enhanced leading to a higher EL intensity, but the light emission efficiency is reduced. On the other hand, the increase of the excess Si concentration causes redshifts in the major EL bands and improves the transition of the EL colors with increasing current. The excess Si concentration is also found to have a significant influence on the EL degradation. These findings are important to the application of the Si-implanted thin films in light emitting devices.

Copyright information

© Springer-Verlag 2010

Authors and Affiliations

  1. 1.School of Electrical and Electronic EngineeringNanyang Technological UniversitySingaporeSingapore
  2. 2.Institute of MicroelectronicsSingaporeSingapore
  3. 3.Institute of Materials Research and EngineeringSingaporeSingapore
  4. 4.Department of PhysicsThe University of Hong KongHong KongChina