Article

Applied Physics A

, Volume 100, Issue 4, pp 987-990

Nonvolatile bipolar resistance switching effects in multiferroic BiFeO3 thin films on LaNiO3-electrodized Si substrates

  • Xinman ChenAffiliated withKey Laboratory of Optoelectronic Material and Device, Mathematics and Science College, Shanghai Normal UniversityState Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University
  • , Guangheng WuAffiliated withState Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University
  • , Hailei ZhangAffiliated withKey Laboratory of Optoelectronic Material and Device, Mathematics and Science College, Shanghai Normal University
  • , Ni QinAffiliated withState Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University
  • , Tao WangAffiliated withKey Laboratory of Optoelectronic Material and Device, Mathematics and Science College, Shanghai Normal University
  • , Feifei WangAffiliated withKey Laboratory of Optoelectronic Material and Device, Mathematics and Science College, Shanghai Normal University
  • , Wangzhou ShiAffiliated withKey Laboratory of Optoelectronic Material and Device, Mathematics and Science College, Shanghai Normal University
  • , Dinghua BaoAffiliated withState Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University Email author 

Rent the article at a discount

Rent now

* Final gross prices may vary according to local VAT.

Get Access

Abstract

We report on reversible bipolar resistance switching effects in multiferroic BiFeO3 thin films without electroforming. The BiFeO3 thin films with (110) preferential orientation were prepared on LaNiO3-electrodized Si substrates with a Pt/BiFeO3/LaNiO3 device configuration. The resistance ratio of high resistance state (HRS) to low resistance state (LRS) of the devices was as high as three orders of magnitude. The dominant conduction mechanisms of LRS and HRS were dominated by ohmic behavior and trap-controlled space charge limited current, respectively. The resistance switching mechanism of the devices was discussed using a modified Schottky-like barrier model taking into account the movement of oxygen vacancies.