Applied Physics A

, Volume 100, Issue 1, pp 305–308

Improved gate-control in InAs nanowire structures by the use of GdScO3 as a gate dielectric

  • C. Volk
  • J. Schubert
  • K. Weis
  • S. Estévez Hernández
  • M. Akabori
  • K. Sladek
  • H. Hardtdegen
  • T. Schäpers
Article

DOI: 10.1007/s00339-010-5804-z

Cite this article as:
Volk, C., Schubert, J., Weis, K. et al. Appl. Phys. A (2010) 100: 305. doi:10.1007/s00339-010-5804-z

Abstract

We investigated the properties of gadolinium scandate (GdScO3) as a gate dielectric for top-gate electrodes on undoped InAs nanowires. It is demonstrated that due to the high dielectric constant of GdScO3 (k=22), a better control of the conductance of the nanowire is achieved compared to a reference SiO2-isolated back-gate electrode. We analyzed the output and transfer characteristics of top-gate-controlled InAs wires at room temperature and at temperatures down to 4 K. Owing to the good coverage of the InAs nanowire by the 50-nm-thick GdScO3 layer, which was deposited by pulsed-laser deposition, the gate leakage current is sufficiently suppressed.

Copyright information

© Springer-Verlag 2010

Authors and Affiliations

  • C. Volk
    • 1
  • J. Schubert
    • 1
  • K. Weis
    • 1
  • S. Estévez Hernández
    • 1
  • M. Akabori
    • 1
    • 2
  • K. Sladek
    • 1
  • H. Hardtdegen
    • 1
  • T. Schäpers
    • 1
  1. 1.Institute of Bio- and Nanosystems (IBN-1) and JARA-Fundamentals of Future Information TechnologyForschungszentrum Jülich GmbHJülichGermany
  2. 2.JAIST Japan Institute of Advanced Science and TechnologyIshikawaJapan

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